A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors
Author:
Affiliation:
1. School of Physics, Shandong University, Jinan 250100, China
2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Funder
Specialized Research Fund for Doctoral Program of Higher Education
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931122
Reference35 articles.
1. Fabrication and analysis of deep submicron strained-Si n-MOSFET's
2. Performance of Trench Power MOSFET With Strained Si/SiGe Multilayer Channel
3. Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
4. Effects of strain relaxation on bare surface barrier height and two-dimensional electron gas in AlxGa1−xN/GaN heterostructures
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2. Local strain modification effects on global properties of AlGaN/GaN high electron mobility transistors;Microelectronic Engineering;2022-06
3. Effects of gate work function on E-mode AlGaN/GaN HEMTs with stack gate β-Ga2O3/p-GaN structure;Journal of Physics D: Applied Physics;2021-06-22
4. The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors;Applied Physics A;2021-05-27
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