Advances in DC/RF Performance of AlGaN/GaN MIS-HEMT by Incorporating Dual Metal Gate Architecture-Reference-Cited by-同舟云学术

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Advances in DC/RF Performance of AlGaN/GaN MIS-HEMT by Incorporating Dual Metal Gate Architecture

Published:2020-11-17 Issue: Volume: Page:1-9
ISSN:0256-4602
Container-title:IETE Technical Review
language:en
Short-container-title:IETE Technical Review

Author:

Visvkarma Ajay Kumar¹²^ORCID,Sehra Khushwant¹^ORCID,Laishram Robert²,Rawal D. S.²,Saxena Manoj³

Affiliation:

1. Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi-110021, India

2. MMIC Fabrication Division, Solid State Physics Laboratory, Lucknow Road, Delhi-110054, India

3. Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi, New Delhi-110078, India

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/02564602.2020.1843555

Reference31 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

4. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

5. Prospects for the application of GaN power devices in hybrid electric vehicle drive systems

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1. Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing;Engineering Research Express;2024-04-22

2. Degradation of electrical performance and radiation damage mechanism of cascode GaN HEMT with 80 MeV proton;Physica Scripta;2024-02-06

3. Design and Simulation of Enhancement-Mode Vertical Superjunction GaN HEMT with Improved Ron and Cut-Off Frequency;IETE Journal of Research;2023-10-29

4. Optimizing breakdown voltage and on-state resistance by modulating the barrier height along 2DEG channel for power p-GaN HEMTs;Semiconductor Science and Technology;2022-10-24

5. Emerging Device Architectures for Space Electronics;HEMT Technology and Applications;2022-06-24

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