Abstract
Abstract
This article proposes a novel step-type gate p-GaN HEMT (STG-HEMT) to optimize breakdown voltage (BV) and on-state resistance (R
ON) by modulating the barrier height along the two-dimensional electron gas (2DEG) channel. The step-type gate consists of thicker and thinner p-GaN layers. At off-state, the barrier height is higher due to the clamping potential effect induced by the thinner p-GaN layer, which contributes to improving BV. At on-state, the barrier height under the thinner p-GaN layer is lower, which contributes to improving 2DEG density under the gate (namely reducing R
ON). Verified by the calibrated simulation, the results show STG-HEMT’s BV is increased by 55% and STG-HEMT’s R
ON is decreased by 20% compared with the conventional power p-GaN HEMT (C-HEMT). At transient behavior, the total switching loss keeps nearly unchanged, while the gate driver loss is increased by about 19%. Furthermore, the impact of the gate length and p-GaN layer’s parameters (including thickness, length, activated Mg doping density) on R
ON, BV, and threshold voltage are discussed.
Funder
the National Natural Science Foundation of China
the Key-Area Research and Development Program of Guangdong Province
Guangdong Basic and Applied Basic Research Foundation
the Guangdong Basic and Applied Basic Research Foundation
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials