Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures-Reference-Cited by-同舟云学术

Hysteresis phenomena of the two dimensional electron gas density in lattice-matched InAlN/GaN heterostructures

Published:2015-08-03 Issue:5 Volume:107 Page:052102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sang Ling¹,Yang Xuelin¹^ORCID,Cheng Jianpeng¹,Jia Lifang²,He Zhi²,Guo Lei¹,Hu Anqi¹,Xiang Yong¹,Yu Tongjun¹^ORCID,Wang Maojun³,Xu Fujun¹,Tang Ning¹,Wang Xinqiang¹⁴,Ge Weikun⁵,Shen Bo¹⁴

Affiliation:

1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

2. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China

3. Institute of Microelectronics, Peking University, Beijing 100871, China

4. Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

5. Department of Physics, Tsinghua University, Beijing 100084, China

Funder

Beijing Municipal Science and Technology Program

National Basic Rsearch Program of China

national high-tech research and development Program of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)