Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures-Reference-Cited by-同舟云学术

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Influence of barrier thickness on luminescence lifetime of the two-dimensional electron gas in InAlN/GaN heterostructures

Published:2017-06 Issue: Volume:106 Page:170-173
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Zhang Caifeng,Tang Ning,Fu Lei,Yang Xuelin,Xu Fujun,Ge Weikun,Shen Bo

Funder

National Basic Research Program of China

National Natural Science Foundation of China

National High-Tech Research and Development Program of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy

2. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State

3. Power electronics on InAlN/(In)GaN: Prospect for a record performance

4. Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

5. M-Plane GaN/InAlN Multiple Quantum Wells in Core–Shell Wire Structure for UV Emission

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