Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4773244
Reference18 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Current status of AlInN layers lattice-matched to GaN for photonics and electronics
3. InAlN/GaN HEMTs: a first insight into technological optimization
4. Conduction in thin dielectric films
5. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors
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1. Investigation of the DC Performance and Linearity of InAlN/GaN HFETs via Studying the Impact of the Scaling of LGS and LG on the Source Access Resistance;IEEE Journal of the Electron Devices Society;2024
2. Temperature and field dependencies of current leakage mechanisms in IrOx contacts on InAlN/GaN heterostructures;Applied Physics Letters;2023-10-09
3. The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs;Physica Scripta;2023-08-09
4. AlN/AlGaN/AlN quantum well channel HEMTs;Applied Physics Letters;2023-05-29
5. Theoretical study on the thermal transport and its tunability of a-plane trilayer GaN;Physica Scripta;2023-05-17
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