M-Plane GaN/InAlN Multiple Quantum Wells in Core–Shell Wire Structure for UV Emission-Reference-Cited by-同舟云学术

M-Plane GaN/InAlN Multiple Quantum Wells in Core–Shell Wire Structure for UV Emission

Published:2013-11-27 Issue:1 Volume:1 Page:38-46
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Durand Christophe¹,Bougerol Catherine²,Carlin Jean-François³,Rossbach Georg³,Godel Florian¹,Eymery Joël¹,Jouneau Pierre-Henri⁴,Mukhtarova Anna¹,Butté Raphaël³,Grandjean Nicolas³

Affiliation:

1. Equipe mixte CEA-CNRS “Nanophysique et Semiconducteurs”, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, 38054, France

2. Equipe mixte CEA-CNRS “Nanophysique et semiconducteurs”, Institut Néel-CNRS, 25 rue des Martyrs, 38042 Grenoble Cedex 9, France

3. Institute of Condensed Matter Physics (ICMP), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland

4. LEMMA, SP2M, UMR-E CEA/UJF-Grenoble 1, INAC, Grenoble, 38054, France

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/ph400031x

Reference56 articles.

1. Nanowire-based one-dimensional electronics

2. Nanowire photonics

3. Synergetic nanowire growth

4. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

5. One-dimensional heterostructures in semiconductor nanowhiskers

Cited by 46 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of high aspect ratio AlN nanopillars by top-down approach combining plasma etching and wet etching;Materials Science in Semiconductor Processing;2024-10

2. UV-A Flexible LEDs Based on Core–Shell GaN/AlGaN Quantum Well Microwires;ACS Applied Materials & Interfaces;2024-09-11

3. Organized AlN Nanowire Arrays by Hybrid Approach of Top-Down Processing and MOVPE Overgrowth for Deep UV Emission Devices;ACS Applied Nano Materials;2024-05-01

4. Faceting mechanisms of GaN nanopillar under KOH wet etching;Materials Science in Semiconductor Processing;2024-04

5. Preferential crystal orientation etching of GaN nanopillars in Cl2 plasma;Materials Science in Semiconductor Processing;2023-10