Lattice relaxation in ZnS epilayers grown on GaP
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121354
Reference12 articles.
1. The preparation of conductive ZnS films by using MBE with a single effusion source
2. Growth of ZnS by Metalorganic Chemical Vapor Deposition
3. Atmospheric pressure atomic layer epitaxy of ZnS using Zn and H2S
4. Dependence of substrate materials on the growth of ZnS on GaAs and GaP substrates
5. Coherent Growth of ZnSe on GaAs by MOCVD
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1. Log-Normal Glide and the Formation of Misfit Dislocation Networks in Heteroepitaxial ZnS on GaP;Crystal Growth & Design;2024-07-03
2. Lattice relaxation of ZnS grown on GaP investigated by high-resolution X-ray diffraction and transmission electron microscopy;physica status solidi (c);2012-05-08
3. Determination of critical thickness of ZnS∕GaP epilayers using spectroscopic ellipsometry;Applied Physics Letters;2006-01-30
4. Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy;Journal of Crystal Growth;2005-05
5. Electron-diffraction and spectroscopical characterisation of ultrathin ZnS films grown by molecular beam epitaxy on GaP(0 0 1);Applied Surface Science;2004-04
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