Electron-diffraction and spectroscopical characterisation of ultrathin ZnS films grown by molecular beam epitaxy on GaP(0 0 1)
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference22 articles.
1. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.
2. The preparation of conductive ZnS films by using MBE with a single effusion source
3. Zinc sulfide on GaP(110): Characterization of epitaxial growth and electronic structure
4. Elastic and plastic strain relaxation in ultrathin CdS/ZnS quantum-well structures grown by molecular-beam epitaxy
5. Epitaxial growth of ZnS on bare and arsenic-passivated vicinal Si(100) surfaces
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