Epitaxial growth of ZnS on bare and arsenic-passivated vicinal Si(100) surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366031
Reference20 articles.
1. Properties of GaAs on Si grown by molecular beam epitaxy
2. Molecular Beam Epitaxy Of Si/ZnS/Si(100) Heterostructures For Silicon-Based Quantum Devices
3. Valence band offset in ZnS layers on Si(111) grown by molecular beam epitaxy
4. Molecular beam epitaxial growth of ZnS on a (100)-oriented Si substrate
5. Molecular Beam Epitaxy of ZnS Films on Arsenic Passivated Silicon Surfaces
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