Determination of critical thickness of ZnS∕GaP epilayers using spectroscopic ellipsometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2168041
Reference26 articles.
1. Semiconductor Clusters, Nanocrystals, and Quantum Dots
2. Multicolor electroluminescent devices using doped ZnS nanocrystals
3. Correlation between cathodoluminescence and structural defects inZnS/GaAs(100) andZnS/eGaAs(100) studied by transmission electron microscopy
4. Photoelectrical properties of ZnS thin films deposited from aqueous solution using pulsed electrochemical deposition
5. Kinetics of chemical beam epitaxy for high quality ZnS film growth
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Lattice relaxation of ZnS grown on GaP investigated by high-resolution X-ray diffraction and transmission electron microscopy;physica status solidi (c);2012-05-08
2. Temperature dependence of phonon modes, dielectric functions, and interband electronic transitions in Cu2ZnSnS4 semiconductor films;Physical Chemistry Chemical Physics;2012
3. A spectroscopic ellipsometric investigation of new critical points of Zn1−xMnxS epilayers;Applied Surface Science;2008-06
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