Dependence of substrate materials on the growth of ZnS on GaAs and GaP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. The effect of bypass flows on heteroepitaxial growth of ZnS on GaP
2. Epitaxial growth of ZnS on GaP by Zn-S-H2 CVD method
3. VPE Growth of ZnS Incorporating Indium on GaP
4. Growth of ZnS by Metalorganic Chemical Vapor Deposition
5. Low resistivity Al-doped ZnS grown by MOVPE
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thickness dependence of double crystal rocking curves and photoluminescence in ZnS epilayers grown on GaAs(100) and GaP(100);Applied Surface Science;1999-10
2. Strain effect and photoluminescence of ZnS epilayers grown on GaP(100) substrates by hot-wall epitaxy;Journal of Applied Physics;1998-07-15
3. Lattice relaxation in ZnS epilayers grown on GaP;Applied Physics Letters;1998-05-04
4. Epitaxial ZnS films grown on GaAs (001) and (111) by pulsed‐laser ablation;Journal of Applied Physics;1993-06
5. Molecular-beam epitaxy of ZnS using an elemental S source;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-03
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