The effect of bypass flows on heteroepitaxial growth of ZnS on GaP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. An optical image storage and processing device using electrooptic ZnS
2. The epitaxial growth of thick smooth films of ZnS on GaAs
3. Contamination of CdS heteroepitaxial layers during vapour growth on GaAs substrates
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Dependence of substrate materials on the growth of ZnS on GaAs and GaP substrates;Journal of Crystal Growth;1989-04
2. VPE Growth of ZnS Incorporating Indium on GaP;Japanese Journal of Applied Physics;1986-07-20
3. Indium doping effects on vapor‐phase growth of ZnS on GaP;Journal of Applied Physics;1986-03
4. Epitaxial growth of ZnS on GaP by Zn-S-H2 CVD method;Journal of Crystal Growth;1981-05
5. Mass transport processes associated with the epitaxial growth of ZnS IN H2: The effects of a bypass flow;Journal of Crystal Growth;1979-01
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