Strain effect and photoluminescence of ZnS epilayers grown on GaP(100) substrates by hot-wall epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368102
Reference17 articles.
1. Molecular-beam epitaxy of ZnS using an elemental S source
2. Molecular beam epitaxy of zinc chalcogenides
3. Epitaxial growth of ZnS on GaP by molecular beam deposition
4. Near band-edge emission in strained MBE-grown ZnS
5. The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure
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1. Synthesis and optical characterization of a high-quality ZnS substrate for optoelectronics and UV solar-energy conversion;RSC Advances;2016
2. Thermal annealing effect on the structural properties of epitaxial growth of GaP on Si substrate;Journal of Crystal Growth;2015-06
3. Cathodoluminescence Modulation of ZnS Nanostructures by Morphology, Doping, and Temperature;Advanced Functional Materials;2013-03-05
4. Growth temperature dependence of the structural and photoluminescence properties of MBE-grown ZnS nanowires;Journal of Crystal Growth;2009-04
5. Determination of critical thickness of ZnS∕GaP epilayers using spectroscopic ellipsometry;Applied Physics Letters;2006-01-30
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