VPE Growth of ZnS Incorporating Indium on GaP-Reference-Cited by-同舟云学术

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VPE Growth of ZnS Incorporating Indium on GaP

Published:1986-07-20 Issue:Part 1, No. 7 Volume:25 Page:1036-1039
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Goto Hideo,Zhou Jun,Sawaki Nobuhiko,Akasaki Isamu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of In and Sn dopants on single-crystal growth and phase transformations in polycrystalline ZnS accompanying high-temperature strain;Journal of Optical Technology;2001-01-01

2. Solid-phase recrystallization of ZnS ceramics in phase transition region;Journal of Crystal Growth;2000-06

3. Liquid phase epitaxy and vapour phase epitaxy of the widegap zinc chalcogenides;Widegap II–VI Compounds for Opto-electronic Applications;1992

4. Vapor-phase growth of ZnO crystals by chemical transport and effect of metal doping;Journal of Crystal Growth;1991-02

5. Dependence of substrate materials on the growth of ZnS on GaAs and GaP substrates;Journal of Crystal Growth;1989-04

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