Atmospheric pressure atomic layer epitaxy of ZnS using Zn and H2S
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs
2. Atomic layer epitaxial growth of ZnSe, ZnTe, and ZnSe‐ZnTe strained‐layer superlattices
3. Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam Epitaxy
4. Atmospheric Pressure Atomic Layer Epitaxy of ZnSe Using Zn and H2Se
5. A novel atmospheric pressure technique for the deposition of ZnS by atomic layer epitaxy using dimethylzinc
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1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14
2. The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth;Journal of the American Chemical Society;2010-05-14
3. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15
4. Sphalerite-type (Cd, Zn)S films by atomic layer epitaxy in the gas flow;Journal of Crystal Growth;2000-06
5. Thickness dependence of double crystal rocking curves and photoluminescence in ZnS epilayers grown on GaAs(100) and GaP(100);Applied Surface Science;1999-10
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