The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth-Reference-Cited by-同舟云学术

The Transition between Conformal Atomic Layer Epitaxy and Nanowire Growth

Published:2010-05-14 Issue:22 Volume:132 Page:7592-7594
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Yang Ren Bin¹,Zakharov Nikolai¹,Moutanabbir Oussama¹,Scheerschmidt Kurt¹,Wu Li-Ming¹,Gösele Ulrich¹,Bachmann Julien¹,Nielsch Kornelius¹

Affiliation:

1. Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany, Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg, Germany, and State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002, P. R. China

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja102590v

Reference51 articles.

1. Atomic Layer Deposition: An Overview

2. SEMICONDUCTOR NANOWIRES AND NANOTUBES

3. Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires

4. Vertically aligned Si intrananowire p-n diodes by large-area epitaxial growth

5. Growth phenomena of Si and Si/Ge nanowires on Si (111) by molecular beam epitaxy

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