Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics-Reference-Cited by-同舟云学术

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Published:2018-05-28 Issue:22 Volume:112 Page:222903
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ali T.¹^ORCID,Polakowski P.¹,Riedel S.¹,Büttner T.¹,Kämpfe T.¹,Rudolph M.¹,Pätzold B.¹,Seidel K.¹,Löhr D.¹,Hoffmann R.¹,Czernohorsky M.¹,Kühnel K.¹,Thrun X.¹,Hanisch N.¹,Steinke P.¹,Calvo J.¹,Müller J.¹

Affiliation:

1. Fraunhofer IPMS, Center Nanoelectronic Technologies (CNT), Königsbrücker Str. 178, 01099 Dresden, Germany

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5029324

Reference25 articles.

1. Permittivity increase of yttrium-doped HfO2 through structural phase transformation

2. Permittivity enhancement of hafnium dioxide high-κ films by cerium doping

3. Phase transitions in ferroelectric silicon doped hafnium oxide

4. Ferroelectricity in hafnium oxide thin films

5. Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

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