BCl3/Cl2 plasma etching process to fabricate a ferroelectric gate structure for device integration-Reference-Cited by-同舟云学术

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BCl3/Cl2 plasma etching process to fabricate a ferroelectric gate structure for device integration

Published:2024-06 Issue: Volume:216 Page:108918
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kang Bohyeon,Ahn Sung-min,Park Jongseo,An Jehyun,Hong Giryun,Ham Beomjoo,Baek Rock-Hyun

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Korea Ministry of Trade Industry and Energy

Korea Ministry of Science and ICT

Publisher

Elsevier BV

Reference30 articles.

1. Se Jong Rhee, Chang Scok Kang, Chang Hwan Choi, Chang Yong Kang, Krishnan S, Manhong Zhang, et al., “Improved electrical and material characteristics of hafnium titanate multi-metal oxide n-MOSFETs with ultra-thin EOT (∼8\AA) gate dielectric application,” IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004.IEEE, 2004. p. 837-840. doi: 10.1109/iedm.2004.1419307.

2. Kelleher, A. B. Celebrating 75 years of the transistor A look at the evolution of Moore’s Law innovation. In: 2022 International Electron Devices Meeting (IEDM). IEEE, 2022. p. 1.1. 1-1.1. 5. doi: 10.1109/iedm45625.2022.10019538.

3. Principles and applications of ferroelectrics and related materials;Lines,2001

4. Hoffmann, Michael; Slesazeck, Stefan; MIKOLAJICK, Thomas. “Progress and future prospects of negative capacitance electronics: A materials perspective.” APL Materials, 2021, 9.2. doi: 10.1063/5.0032954.

5. Salahuddin, Sayeef; Datta, Supriyo. “Use of negative capacitance to provide voltage amplification for low power nanoscale devices.” Nano letters, 2008, 8.2: 405-410. doi: 10.1021/nl071804g.

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