Reoxidation of silicon nitride studied using x-ray photoelectron spectroscopy and transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1631068
Reference17 articles.
1. Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric
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4. Rapid thermal N2O oxynitride on Si(100)
5. Atomic structures at a Si–nitride/Si(001) interface
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