First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation-Reference-Cited by-同舟云学术

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First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation

Published:2008-11 Issue:9 Volume:104 Page:093508
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gavrikov Alexey,Knizhnik Andrey,Safonov Andrey,Scherbinin Andrey,Bagatur’yants Alexander,Potapkin Boris,Chatterjee Aveek,Matocha Kevin

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3006004

Reference57 articles.

1. Band alignment and defect states at SiC/oxide interfaces

2. Intrinsic SiC/SiO2 Interface States

3. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing

4. Effects of nitridation in gate oxides grown on 4H-SiC

5. Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC

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1. Relaxation of the Distorted Lattice of 4H-SiC (0001) Surface by Post-Oxidation Annealing;Solid State Phenomena;2023-07-28

2. Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres;Materials;2023-06-14

3. Atomic scale localization of Kohn–Sham wavefunction at SiO2/4H–SiC interface under electric field, deviating from envelope function by effective mass approximation;Applied Physics Letters;2023-05-29

4. Reaction mechanisms of the initial steps for the oxidation of (0001¯) C and (0001) Si faces of SiC with OH radicals;Surface Science;2022-05

5. ReaxFF reactive molecular dynamics study on oxidation behavior of 3C-SiC in H2O and O2;Computational Materials Science;2021-07

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