Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric-Reference-Cited by-同舟云学术

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Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric

Published:2021-09 Issue: Volume:191 Page:110359
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Zhang S.,Wei K.,Zhang Y.C.,Chen X.J.,Huang S.,Yin H.B.,Liu G.G.,Yuan T.T.,Zheng Y.K.,Wang X.H.,Liu X.Y.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference47 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Time-dependent dielectric breakdown of recessed AlGaN/GaN-on-Si MOS-HFETs with PECVD SiO2 gate oxide

3. IEEE Electron Device Lett;Shrestha,2020

4. Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors

5. Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation Layer

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1. Plasma-enhanced atomic layer deposition of silicon nitride thin films with different substrate biasing using Diiodosilane precursor;Materials Science in Semiconductor Processing;2024-12

2. Change of chemical bonding properties at SiNx/GaN/AlGaN interface with SiH4 flow rate and its impact on the carrier transport properties of MIS-diodes;Materials Science and Engineering: B;2024-09

3. Investigation on Traps Dynamics & Negative Bias Stress in D-Mode GaN-on-Si Power MIS HEMTs Under High-Temperature;IEEE Transactions on Device and Materials Reliability;2024-09

4. The effect of Si3N4/Al2O3 stacked structure of AlGaN/GaN HEMTs;Microelectronics Reliability;2023-12

5. Effect of nitrogen on the structure and properties of Zr-Si-B-N coatings deposited by magnetron sputtering;Surface and Coatings Technology;2023-12

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