Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3160331
Reference25 articles.
1. Group III-nitride based hetero and quantum structures
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4. Fracture of AlxGa1-xN/GaN Heterostructure -- Compositional and Impurity Dependence --
5. Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management
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