Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties-Reference-Cited by-同舟云学术

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Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties

Published:2021-02 Issue: Volume:720 Page:138489
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Makinudin Abdullah Haaziq Ahmad^ORCID,Omar Al-Zuhairi,Bakar Ahmad Shuhaimi Abu,Anuar Afiq,Supangat Azzuliani

Funder

Universiti Malaya

Collaborative Research in Engineering, Science and Technology Centre

Ministry of Higher Education, Malaysia

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. 510-515 nm InGaN-based green laser diodes on c-plane GaN substrate;Miyoshi;Appl. Phys. Express,2009

2. Surface morphological, structural, electrical and optical properties of GaN-based light-emitting diodes using submicron-scaled Ag islands and ITO thin films;Lee;Opt. Mater.,2018

3. Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes;Yamada;Jpn. J. Appl. Phys.,2007

4. White light emitting diodes with super-high luminous efficacy;Narukawa;J. Phys. D,2010

5. Control of quantum-confined stark effect in InGaN-based quantum wells;Ryou;IEEE J. Sel. Top. Quantum Electron.,2009

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