Surface diffusion lengths of adatoms on 6H‐SiC{0001} faces in chemical vapor deposition of SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359999
Reference21 articles.
1. Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
2. Chemical vapor deposition and characterization of 6H‐SiC thin films on off‐axis 6H‐SiC substrates
3. Step-Controlled Epitaxial Growth of SiC
4. Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers
5. Growth mechanism of 6H‐SiC in step‐controlled epitaxy
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