Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates-Reference-Cited by-同舟云学术

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Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Published:2013-02-14 Issue:6 Volume:113 Page:063506
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Perillat-Merceroz Guillaume,Cosendey Gatien,Carlin Jean-François,Butté Raphaël,Grandjean Nicolas

Funder

Swiss National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4790424

Reference55 articles.

1. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

2. Power electronics on InAlN/(In)GaN: Prospect for a record performance

3. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

4. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures

5. 205-GHz (Al,In)N/GaN HEMTs

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1. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition;Journal of Alloys and Compounds;2024-12

2. Characterizations of Subbandgap Optical Absorption in Undoped‐GaN and 90 nm‐Thick Al_1−xIn_xN Thin Film on Sapphire Substrates Grown by Metal–Organic Chemical Vapor Deposition;physica status solidi (b);2024-05-19

3. InAlN cladding implementation in green superluminescent diodes and lasers;Applied Physics Letters;2023-05-15

4. Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/ m ‐plane Sapphire Template;physica status solidi (b);2023-01-04

5. Stress relaxation in III-V nitrides: Investigation of metallic atoms interaction with the N-vacancy;Europhysics Letters;2022-03-01

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