InAlN cladding implementation in green superluminescent diodes and lasers

Abstract

We demonstrate state-of-the-art superluminescent light emitting diodes emitting in the green spectral range with InAlN n-type claddings. The implementation of an InAlN optical blocking layer for suppressing modal substrate leakage leading to high farfield quality is first reported. An optimized structure by optical mode simulations featuring a bottom n-type InAlN cladding layer is then presented. Compared to conventional AlGaN cladding based devices, the electro-optical performance, optical confinement, and modal substrate leakage are greatly improved. Performance improvements in green laser diode devices are also presented.