The crucial role of InAlN for blue and green LDs and SLEDs with low power consumption-Reference-Cited by-同舟云学术

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The crucial role of InAlN for blue and green LDs and SLEDs with low power consumption

Published:2024-03-08 Issue: Volume:207 Page:41
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Container-title:Gallium Nitride Materials and Devices XIX
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Author:

Malinverni Marco,Castiglia Antonino,Rossetti Marco,Ferhatovic Adin,Martin Denis,Duelk Marcus,Vélez Christian

Publisher

SPIE

Reference6 articles.

1. Waveguide design of green InGaN laser diodes;Lermer;Phys. Stat. Sol. (a),2010

2. Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

3. InAlN cladding implementation in green superluminescent diodes and lasers

4. Ultra-Low Threshold and Temperature-Stable InGaN Blue and Green Laser Diodes

5. GaN-based vertical-cavity surface-emitting lasers using n-type conductive AlInN/GaN bottom distributed Bragg reflectors with graded interfaces

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1. Green multi-SLED source for high-resolution visible OCT;Optical Coherence Tomography and Coherence Domain Optical Methods in Biomedicine XXVIII;2024-03-13

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