Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/ <i>m</i> ‐plane Sapphire Template-Reference-Cited by-同舟云学术

Growth and Microstructure Analyses of Semipolar AlInN Epitaxial Layers on a Fully Relaxed Semipolar {112¯2} GaInN/GaN/ m ‐plane Sapphire Template

Published:2023-01-04 Issue: Volume: Page:2200492
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Miyoshi Makoto¹²^ORCID,Fujisawa Takahiro¹,Nakabayashi Taiki¹,Egawa Takashi¹²^ORCID,Takeuchi Tetsuya³^ORCID,Okada Narihito⁴^ORCID,Tadatomo Kazuyuki⁴^ORCID

Affiliation:

1. Research Center for Nano Devices and Advanced Materials Nagoya Institute of Technology Nagoya Aichi 466-8555 Japan

2. Innovation Center for Multi-Business of Nitride Semiconductors Nagoya Institute of Technology Nagoya Aichi 466-8555 Japan

3. Faculty of Science and Technology Meijo University Nagoya Aichi 468-0073 Japan

4. Department of Electrical and Electronic Engineering Yamaguchi University Ube Yamaguchi 753-8511 Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202200492

Reference36 articles.

1. InAlN/GaN HEMTs: a first insight into technological optimization

2. Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures

3. Indium incorporation dynamics into AlInN ternary alloys for laser structures lattice matched to GaN

4. Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer

5. Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate