Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells-Reference-Cited by-同舟云学术

Quasiregular quantum-dot-like structure formation with postgrowth thermal annealing of InGaN/GaN quantum wells

Published:2002-04-08 Issue:14 Volume:80 Page:2571-2573
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Yen-Sheng,Ma Kung-Jen,Hsu Cheng,Chung Yi-Yin,Liu Chih-Wen,Feng Shih-Wei,Cheng Yung-Chen,Yang C. C.,Mao Ming-Hua,Chuang Hui-Wen,Kuo Cheng-Ta,Tsang Jian-Shihn,Weirich Thomas E.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1467983

Reference11 articles.

1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm

2. Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces

3. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

4. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures

5. Luminescences from localized states in InGaN epilayers

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