Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment-Reference-Cited by-同舟云学术

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Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

Published:2021-12 Issue: Volume:31 Page:105057
ISSN:2211-3797
Container-title:Results in Physics
language:en
Short-container-title:Results in Physics

Author:

Hou Yufei,Liang Feng,Zhao Degang,Liu Zongshun,Chen Ping,Yang Jing

Funder

Beijing Nova Program

China Academy of Space Technology

National Key Research and Development Program of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference36 articles.

1. Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer;Du;J Comput Electr,2016

2. Nonpolar GaN-based nanopillar green light-emitting diode (LED) fabricated by using self-aligned In3Sn nanodots;Park;Appl Surf Sci,2021

3. Nanostructure Ag dots for improving thermal stability of Ag reflector for GaN-based light-emitting diodes;Jeon;Appl Phys Lett,2012

4. InGaN/GaN blue light emitting diodes using freestanding GaN extracted from a Si substrate;Lee;ACS Photonics,2018

5. Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs;Xu;J. Semicond.,2019

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strong evidence for diffusion of point defects in GaInN/GaN quantum well structures;AIP Advances;2024-04-01

2. Strain control and its effect on the optical properties of InGaN/GaN multiple quantum wells;Journal of Luminescence;2024-02

3. Nanomaterial integration in micro LED technology: Enhancing efficiency and applications;Next Nanotechnology;2024

4. InGaN surface morphology evolution investigated by atomic force microscope with power spectral density analysis;Journal of Crystal Growth;2023-06

5. Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells;Results in Physics;2023-03

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