Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121168
Reference16 articles.
1. High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
3. Continuous‐wave operation of InGaN multi‐quantum‐well‐structure laser diodes at 233 K
4. Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
5. Excitonic enhancement of optical gain in quantum wells
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