Realization of Highly Efficient InGaN Green Light-Emitting Diodes with Laser-Annealed Multiple-Quantum Well Structures: Formation of Quantum Dot Structures-Reference-Cited by-同舟云学术

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Realization of Highly Efficient InGaN Green Light-Emitting Diodes with Laser-Annealed Multiple-Quantum Well Structures: Formation of Quantum Dot Structures

Published:2022-09-06 Issue:1 Volume:1 Page:32-40
ISSN:2771-9855
Container-title:ACS Applied Optical Materials
language:en
Short-container-title:ACS Appl. Opt. Mater.

Author:

Wang Xinwei¹²^ORCID,Zhang Ruijie¹²,Wei Xuecheng¹²,Wang Junxi¹²,Zhang Ning¹

Affiliation:

1. State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Funder

Ministry of Science and Technology of the People's Republic of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaom.2c00003

Reference44 articles.

1. Solid-State Light Sources Getting Smart

2. Nitride-based semiconductors for blue and green light-emitting devices

3. The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

4. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’

5. Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap

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