The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem-Reference-Cited by-同舟云学术

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Published:2014-09-15 Issue:11 Volume:105 Page:112110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Massabuau F. C.-P.¹,Davies M. J.²,Oehler F.¹,Pamenter S. K.¹,Thrush E. J.¹,Kappers M. J.¹,Kovács A.³,Williams T.⁴,Hopkins M. A.⁵,Humphreys C. J.¹,Dawson P.²,Dunin-Borkowski R. E.³,Etheridge J.⁴,Allsopp D. W. E.⁵,Oliver R. A.¹

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, 22 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

2. Photon Science Institute, School of Physics and Astronomy, Alan Turing Building, University of Manchester, Manchester M13 9PL, United Kingdom

3. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, Leo-Brandt- Straße, D-52425 Jülich, Germany

4. Monash Centre for Electron Microscopy, Monash University, Clayton Campus, VIC 3800, Australia

5. Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Australian Research Council (ARC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference19 articles.

1. Dislocations and their reduction in GaN

2. Chemical mapping and formation of V-defects in InGaN multiple quantum wells

3. Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

4. High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

5. Properties of trench defects in InGaN/GaN quantum well structures

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