Impact ionization in (100), (110), and (111) oriented InP avalanche photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94279
Reference22 articles.
1. InGaAsP heterostructure avalanche photodiodes with high avalanche gain
2. Avalanche multiplication and noise characteristics of low‐dark‐current GaInAsP/InP avalanche photodetectors
3. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current
4. Multiplication noise in uniform avalanche diodes
5. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
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