Simulations for InAlAs digital alloy avalanche photodiodes-Reference-Cited by-同舟云学术

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Simulations for InAlAs digital alloy avalanche photodiodes

Published:2019-10-21 Issue:17 Volume:115 Page:171106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zheng J.¹,Yuan Y.¹^ORCID,Tan Y.¹,Peng Y.¹,Rockwell A.²^ORCID,Bank S. R.²,Ghosh A. W.¹³,Campbell J. C.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904, USA

2. Microelectronics Research Center, University of Texas, Austin, Texas 78758, USA

3. Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

Defense Advanced Research Projects Agency

Army Research Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5114918

Reference22 articles.

1. Recent Advances in Avalanche Photodiodes

2. Electron and hole ionization rates in epitaxial silicon at high electric fields

3. Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes

4. High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Biaxial strain modulated valence-band engineering in III-V digital alloys;Physical Review B;2022-07-06

2. Atomistic Transport Modeling, Design Principles, and Empirical Rules for Low-Noise III-V Digital-Alloy Avalanche Photodiodes;Physical Review Applied;2022-03-16

3. Characteristics of thin InAlAs digital alloy avalanche photodiodes;Optics Letters;2021-08-03

4. Large tunable bandgaps in the InAs/AlAs strain-compensated short-period superlattices grown by molecular beam epitaxy;Applied Physics Letters;2021-06-21

5. A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes;Journal of Lightwave Technology;2021-06

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