Tuning of energy dispersion properties in InAlAs digital alloys-Reference-Cited by-同舟云学术

Tuning of energy dispersion properties in InAlAs digital alloys

Published:2019-06-28 Issue:24 Volume:125 Page:245702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zheng J.¹,Tan Y.²,Yuan Y.¹^ORCID,Ghosh A. W.¹³,Campbell J. C.¹

Affiliation:

1. Electrical and Computer Engineering Department, University of Virginia, Charlottesville, Virginia 22904, USA

2. Synopsys Inc., 455 N Mary Ave., Sunnyvale, California 94085, USA

3. Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA

Funder

Defense Advanced Research Projects Agency

Army Research Office

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5091694

Reference40 articles.

1. Broadly Tunable AlInAsSb Digital Alloys Grown on GaSb

2. Digital Alloy InAlAs Avalanche Photodiodes

3. Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary

4. L. G. Vaughn, L. R. Dawson, E. A. Pease, L. F. Lester, H. F. Xu, Y. B. Jiang, and A. L. Gray, in Physics and Simulation of Optoelectronic Devices XIII (Proceedings of the Society of Photo-Optical Instrumentation Engineers (SPIE), 2005), Vol. 5722, p. 307.

5. L. G. Vaughn, L. R. Dawson, H. F. Xu, Y. B. Jiang, and L. F. Lester, in Progress in Semiconductors II—Electronic and Optoelectronic Applications (Mater. Proc. Res. Soc. Symposium, 2003), Vol. 744, p. 397.

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