Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Sb-based nanostructures for mid-IR optoelectronics;Toropov,2003
2. 175 K continuous wave operation of InAsSb/InAlAsSb quantum‐well diode lasers emitting at 3.5 μm
3. InAsSb/InAlAsSb strained quantum‐well diode lasers emitting at 3.9 μm
4. MBE growth of high-power quantum-well diode lasers emitting at 3.5 μm
5. MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3μm
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