High-speed III-V based avalanche photodiodes for optical communications—the forefront and expanding applications-Reference-Cited by-同舟云学术

High-speed III-V based avalanche photodiodes for optical communications—the forefront and expanding applications

Published:2020-04-06 Issue:14 Volume:116 Page:140502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nada Masahiro¹^ORCID,Nakajima Fumito²,Yoshimatsu Toshihide¹,Nakanishi Yasuhiko¹,Tatsumi Shoko¹,Yamada Yuki²,Sano Kimikazu¹,Matsuzaki Hideaki²

Affiliation:

1. NTT Device Innovation Center, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

2. NTT Device Technology Labs., NTT Corporation, Atsugi, Kanagawa 243-0198, Japan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0003573

Reference35 articles.

1. Digital coherent optical communication systems: fundamentals and future prospects

2. S. Tsukamoto , D. Gagnon , K. Katoh , and K. Kikuchi , in Proceedings of the OFC (2005), p. PDP29.

3. C. R. Fuldger , T. Duthel , D. Borne , C. Schulien , E. Schmidt , T. Wuth , E. Man , G. Khoe , and H. Waardt , in Proceedings of the OFC (2007), p. PDP22.

4. Avalanche‐Photodiode Frequency Response

5. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Low Power Photodetector Using SOI/Bulk Hybrid Technology With High Responsivity and Detectivity Optimization Capability;IEEE Electron Device Letters;2024-01

2. High-gain bandwidth product of wafer-bonded near-infrared III-V/silicon APD using polycrystalline silicon bonding layer;Physica Scripta;2023-12-01

3. Cutting-edge THz Devices as Essential Parts of IOWN - Innovative Optical and Wireless Network;2023 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK);2023-11-16

4. Bandwidth characterization and optimization of high-performance mid-wavelength infrared HgCdTe e-avalanche photodiodes;Infrared Physics & Technology;2023-06

5. Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths;IEEE Transactions on Electron Devices;2023-05