Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths-Reference-Cited by-同舟云学术

Gain and Excess Noise in HgCdTe e-Avalanche Photodiodes at Various Temperatures and Wavelengths

Author:

Zhu Liqi¹^ORCID,Ge Huachen²^ORCID,Guo Huijun³,Chen Lu³,Lin Chun³,Chen Baile⁴^ORCID

Affiliation:

1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China,

2. Optoelectronic Device Laboratory, School of Information Science and Technology, ShanghaiTech University, Shanghai, China

3. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

4. Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Double First-Class Initiative Fund of ShanghaiTech University

Fund of Shanghai Institute of Technical Physics (SITP) Innovation Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

Reference25 articles.

4. Temperature-dependent characteristics of HgCdTe mid-wave infrared E-avalanche photodiode;zhu;IEEE J Sel Topics Quantum Electron,2021

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