Accurate determination of impact ionization coefficient ratio and temperature dependence of InGaAs/InP avalanche photodiodes

Abstract

We propose a broadband noise test method (10 Hz–1 MHz) using a direct power method to measure the excess noise of InGaAs/InP avalanche photodiodes (APDs) with a separate absorption, grading, charge, and multiplication structure. By this means, the impact ionization coefficient ratio (the k value) can be accurately determined. Compared with previous studies, this method can distinguish between low-frequency noise and excess noise, so for an appropriate high frequency spectral range, the excess noise can be analyzed without mixing in other noise information. Three different APDs fabricated in-house with different diameters (12, 25, and 60 µm) were investigated using the above-mentioned method under temperatures varying from −10 to −40 °C. Our findings showed that the k value of the APDs decreased as the temperature decreased. When the temperature decreased to −40 °C, the k value of the 12, 25, and 60 µm diameter diodes was as low as 0.1, 0.3, and 0.2, respectively. The measurement results are consistent with our device design and not only provide useful information for the future selection of device materials and structures but also demonstrate the feasibility of the broadband noise measurement method in the accurate determination of the k value. It indicates that low excess noise can be achieved by utilizing the temperature dependence of k.