Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature-Reference-Cited by-同舟云学术

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Low excess noise HgCdTe e-SWIR avalanche photodiode operating at high gain and temperature

Published:2024-09 Issue: Volume:141 Page:105419
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Wang Zihao^ORCID,Zhu Liqi,Yang Zezheng,Ge Huachen,Guo Huijun,Chen Lu,Lin Chun,Chen Baile^ORCID

Publisher

Elsevier BV

Reference30 articles.

1. Short-wave infrared HgCdTe avalanche photodiodes;Rothman;J. Electron. Mater.,2012

2. Recent advances in avalanche photodiodes;Campbell;J. Lightwave Technol.,2015

3. Impact ionization coefficients of digital alloy and random alloy Al0.85 Ga0.15 As0.56 Sb0.44 in a wide electric field range;Guo;J. Lightwave Technol.,2022

4. Characterization of HgCdTe MWIR back-illuminated electron-initiated avalanche photodiodes;Reine;J. Electron. Mater.,2008

5. HgCdTe photodetectors;Rogalski,2020

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