Avalanche multiplication and noise characteristics of low‐dark‐current GaInAsP/InP avalanche photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92070
Reference13 articles.
1. InGaAsP/InP photodiodes: Microplasma-limited avalanche multiplication at 1-1.3-µm wavelength
2. Long‐wavelength InGaAsP avalanche photodiodes
3. Evidence for tunneling in reverse‐biased III‐V photodetector diodes
4. InGaAsP heterostructure avalanche photodiodes with high avalanche gain
5. InP-lnGaAsP planar avalanche photodiodes with self-guard-ring effect
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3. Generalized excess noise factor for avalanche photodiodes of arbitrary structure;IEEE Transactions on Electron Devices;1990-03
4. Iii–V Semiconductor Devices;Materials Processing: Theory and Practices;1989
5. Analytical model for leakage current in InGaAsP avalanche photodiodes;Solid-State Electronics;1988-09
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