Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films-Reference-Cited by-同舟云学术

Stabilization and enhanced energy gap by Mg doping in ε-phase Ga2O3 thin films

Published:2018-02 Issue:2 Volume:8 Page:025008
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Bi Xiaoyu¹,Wu Zhenping¹,Huang Yuanqi¹^ORCID,Tang Weihua¹

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5022600

Reference20 articles.

1. Crystal Structure of β‐Ga2O3

2. Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films

3. Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

4. Epitaxial growth of phase-pure ε-Ga2O3 by halide vapor phase epitaxy

5. Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

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