Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence-Reference-Cited by-同舟云学术

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Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

Published:2014-09-15 Issue:11 Volume:105 Page:111108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Marcinkevičius S.¹,Gelžinytė K.¹²,Zhao Y.³,Nakamura S.³,DenBaars S. P.³,Speck J. S.³

Affiliation:

1. Department of Materials and Nano Physics, KTH Royal Institute of Technology, Electrum 229, 16440 Kista, Sweden

2. Institute of Applied Research, Vilnius University, Saulėtekio 9-3, 10222 Vilnius, Lithuania

3. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

Solid State Lighting and Energy Electronic Center

Vetenskapsrådet (Swedish Research Council)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference31 articles.

1. Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

2. Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

3. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

4. 531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

5. Electroluminescence Characterization of (20\bar21) InGaN/GaN Light Emitting Diodes with Various Wavelengths

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1. Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence;Journal of Applied Physics;2024-08-26

2. N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs;Photonics Research;2022-03-29

3. Optimization of InGaN quantum well interfaces for fast interwell carrier transport and low nonradiative recombination;Gallium Nitride Materials and Devices XVII;2022-03-05

4. Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells;Japanese Journal of Applied Physics;2021-12-01

5. Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells;Journal of Applied Physics;2020-09-14

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