Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy-Reference-Cited by-同舟云学术

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Unintentional indium incorporation into barriers of InGaN/GaN multiple quantum wells studied by photoreflectance and photoluminescence excitation spectroscopy

Published:2016-07-07 Issue:1 Volume:120 Page:015703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Freytag Stefan¹,Feneberg Martin¹^ORCID,Berger Christoph¹,Bläsing Jürgen¹,Dadgar Armin¹^ORCID,Callsen Gordon²,Nippert Felix²^ORCID,Hoffmann Axel²,Bokov Pavel Yu.³,Goldhahn Rüdiger¹^ORCID

Affiliation:

1. Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

2. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

3. Department of Physics, Moscow State University, Moscow 119992, Russia

Funder

German Academic Exchange Service - MSU

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4955426

Reference51 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. Composition dependence of polarization fields in GaInN/GaN quantum wells

3. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

4. Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

5. High quality, high efficiency and ultrahigh In-content InGaN QWs – the problem of thermal stability

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells;Journal of Applied Physics;2020-01-21

2. Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy;Semiconductors;2019-04

3. Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE;Applied Science and Convergence Technology;2017-05-31

4. Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy;Solid-State Electronics;2017-04

5. Crystal structure and electron transition underlying photoluminescence of methylammonium lead bromide perovskites;Journal of Materials Chemistry C;2017

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