Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1427143
Reference15 articles.
1. Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm
2. Spatially resolved cathodoluminescence spectra of InGaN quantum wells
3. Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
4. Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
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