Composition dependence of polarization fields in GaInN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1601310
Reference20 articles.
1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors
4. The influence of the strain‐induced electric field on the charge distribution in GaN‐AlN‐GaN structure
5. Spontaneous polarization and piezoelectric constants of III-V nitrides
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