GaN-Based Integrated Optical Devices for WideScenario Sensing Applications

Abstract

Sensors that detect variations in the surroundings and convert them into electrical signals are crucial in numerous fields, including healthcare, manufacturing, and environmental monitoring. Optical sensors, in terms of various sensing principles, hold considerable potential due to their fast response, high sensing resolution, and ability to withstand magnetic interference. Despite their advantages, traditional optical sensing techniques also have certain limitations, such as bulky structures, tedious alignment procedures, and high production expenses. To address this issue, on-chip integration has been proposed, and GaN and its alloys can be ideal materials due to their high efficiency, long lifespan, and high stability. By simultaneously forming the light emitter and photodetector on a shared substrate through wafer-fabrication processes, miniaturized GaN optical sensors possess a compact design, small size, high robustness, low manufacturing cost, and simple operations. This chapter discusses the working mechanisms and influencing factors of integrated GaN devices alongside their recent progress in advanced sensing applications.<br>