Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE-Reference-Cited by-同舟云学术

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Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE

Published:2017-05-31 Issue:3 Volume:26 Page:52-54
ISSN:2288-6559
Container-title:Applied Science and Convergence Technology
language:en
Short-container-title:Appl. Sci. Converg. Technol.

Author:

Woo Hyeonseok¹²,Kim Jongmin¹,Cho Sangeun¹,Jo Yongcheol¹,Roh Cheong Hyun²,Kim Hyungsang¹,Hahn Cheol-Koo²,Im Hyunsik¹

Affiliation:

1. Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea

2. Display Materials & Components Research Center, Korea Electronics Technology Institute, Seongnam 13509, Korea

Publisher

The Korean Vacuum Society

Subject

Electrical and Electronic Engineering,Physical and Theoretical Chemistry,Condensed Matter Physics,Materials Science (miscellaneous)

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kvs/JAKO201718836709747.pdf

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integration of GaN-LEDs with Heterogeneous Device Components by Epitaxil Film Bonding;2020 IEEE 70th Electronic Components and Technology Conference (ECTC);2020-06

2. Epitaxial growth of low temperature GaN using metal migration enhanced epitaxy for high-quality InGaN/GaN heterojunctions;Superlattices and Microstructures;2018-08

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